Status: | Available |
SKU: | 273472 |
Vendor: | Samsung |
MPN: | MZ-V9P1T0CW |
UPC: | 887276656984 |
EAN: | |
Our Ultimate SSD Reach near max performance with PCIe®4.0. The in-house controller's smart heat control delivers our best power efficiency while maintaining ferocious performance that always keeps you at the top of your game. Maximized PCIe®4.0 speed Huge speed boost. Get random read/write speeds that are 40%/55% faster than 980 PRO. Experience up to 1400K/1550K IOPS, while sequential read/write speeds up to 7450/6900 MB/s reach near the max performance of PCIe® 4.0.123 Fly high in gaming, video editing, 3D modeling, data analysis and more. Breakthrough power efficiency Get more performance while using less power. Enjoy up to 50% improved performance per watt over 980 PRO*. * 980 PRO Sequential Read/Write - 1,129/877 MB/Watt, 990 PRO Sequential Read/Write - 1380/1319 MB/Watt based on test result of 1TB capacity model. Smart thermal control Samsung's own nickel-coated high-end controller delivers effective thermal control and prevents sudden performance drops from overheating. Play confidently with stable thermal power and minimal fan noise even during heavy-graphic gaming. With its slim size, 990 PRO with Heatsink is a perfect fit for PlayStation®5, desktops and laptops that meet the PCI-SIG®D8 standard. * PCI-SIG®D8 standard spec: 8.8mm The champion maker A more than 55% improvement in random performance* enables faster loads for an ultimate gaming experience on PS5 and DirectStorage PC games**. With RGB LED lights, Heatsink’s futuristic design adds style to function *As compared to 980 PRO **Direct Storage technology from Microsoft loads games faster than before by leveraging the multiple GB/sec speed of modern NVMe SSDs. |
|
General Feature Application Client PCs, Game Consoles Capacity 1,000GB (1GB equals 1 Billion byte by IDEMA) noteActual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise) Interface PCIe Gen 4.0 x4, NVMe 2.0 Form Factor M.2 (2280) Storage Memory Samsung V-NAND 3-bit MLC Controller Samsung in-house Controller Cache Memory Samsung 1GB Low Power DDR4 SDRAM |
Performance Sequential Read Up to 7,450 MB/s (Performance may vary based on system hardware and configuration) Sequential write Up to 6,900 MB/s (Performance may vary based on system hardware and configuration) Random Read (4KB, QD32) Up to 1,200,000 IOPS (Performance may vary based on system hardware and configuration) Random Write (4KB, QD32) Up to 1,550,000 IOPS (Performance may vary based on system hardware and configuration) Random Read (4KB, QD1) Up to 22,000 IOPS (Performance may vary based on system hardware and configuration) Random Write (4KB, QD1) Up to 80,000 IOPS (Performance may vary based on system hardware and configuration) |